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SKB06N60HS High Speed IGBT in NPT-technology C * 30% lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for operation above 30 kHz * NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution * * * * High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 6A Eoff 80J Tj 150C Marking K06N60HS Package PG-TO-263-3-2 PG-TO-263-3-2 G E Type SKB06N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Symbol VCE IC Value 600 12 6 Unit V A Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp<1s, D<0.05) Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature (reflow soldering, MSL1) 2) ICpul s IF 24 24 12 6 IFpul s VGE tSC Ptot Tj , Tstg Tj(tl) 24 20 30 10 68 -55...+150 175 245 V s W C VGE = 15V, VCC 400V, Tj 150C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 Oct.07 Power Semiconductors SKB06N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB 1) Symbol RthJC RthJCD RthJA RthJA Conditions Max. Value 1.85 4.5 62 40 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 6 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 6 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 20 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 Typ. 2.8 3.5 1.5 3 1.55 4 4 max. 3.15 4.00 2.05 2.05 5 Unit V A 40 2000 100 nA S IGES gfs V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 6 A Ciss Coss Crss QGate LE IC(SC) V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =6 A V G E = 15 V - 350 50 23 33 7 48 pF nC nH A V G E = 15 V ,t S C 10 s V C C 4 0 0 V, T j 1 5 0 C 2 - Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 1) Power Semiconductors 2 Rev. 2.3 Oct.07 SKB06N60HS Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 C , V R = 4 00 V , I F = 6 A, d i F / d t =6 2 6 A/ s 100 24 76 220 7 315 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 50 2) L = 60 n H, 2) C = 40 pF Energy losses include "tail" and diode reverse recovery. 11 11 196 41 0.10 0.09 0.19 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , RG= 8 1) L = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. T j =1 5 0 C V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 5 0 1) L = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. 8 3 63 59 0.11 0.08 0.19 10 13 216 29 0.15 0.12 0.27 mJ ns mJ ns Symbol Conditions Value min. typ. max. Unit 2) 1) Leakage inductance L a nd Stray capacity C due to test circuit in Figure E. Leakage inductance L a nd Stray capacity C due to test circuit in Figure E. 3 Rev. 2.3 Oct.07 Power Semiconductors SKB06N60HS Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 C V R = 4 00 V , I F = 6 A, d i F / d t =6 7 3 A/ s 150 27 123 500 8.8 280 nC A A/s ns Power Semiconductors 4 Rev. 2.3 Oct.07 SKB06N60HS tP=4s 10A 8s 15s IC, COLLECTOR CURRENT 20A IC, COLLECTOR CURRENT TC=80C 50s 1A 200s 1ms TC=110C 10A Ic Ic 0A 10Hz 100Hz 1kHz 10kHz 100kHz 0,1A 1V DC 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 50) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V) 10A 40W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 60W 5A 20W 0W 25C 50C 75C 100C 125C 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C) Power Semiconductors 5 Rev. 2.3 Oct.07 SKB06N60HS 15A VGE=20V 15V 15A VGE=20V 15V IC, COLLECTOR CURRENT 13V 11V 10A 9V 7V 5V 5A IC, COLLECTOR CURRENT 13V 11V 10A 9V 7V 5V 5A 0A 0V 2V 4V 6V 0A 0V 2V 4V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C) T J=150C 15A 25C -55C VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C 150C IC=6A IC=12A IC, COLLECTOR CURRENT 10A 5A IC=3A 0A 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 6 Rev. 2.3 Oct.07 SKB06N60HS td(off) tf 100ns t, SWITCHING TIMES t, SWITCHING TIMES 100 ns td(off) tf 10ns td(on) 10 ns td(on) tr tr 1ns 0A 5A 10A 1 ns 0 50 100 150 200 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=50, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=6A, Dynamic test circuit in Figure E) td(off) VGE(th), GATE-EMITT TRSHOLD VOLTAGE 5,0V 4,5V max. 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V -50C min. typ. t, SWITCHING TIMES 100ns tf 10ns td(on) 0C tr 50C 100C 150C 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=6A, RG=50, Dynamic test circuit in Figure E) TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.5mA) Power Semiconductors 7 Rev. 2.3 Oct.07 SKB06N60HS *) Eon include losses due to diode recovery 0,5mJ Ets* 0,6 mJ *) Eon include losses due to diode recovery Ets* E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 0,4mJ 0,5 mJ 0,4 mJ Eon* 0,3 mJ 0,2 mJ 0,1 mJ 0,0 mJ Eoff 0,3mJ Eon* 0,2mJ Eoff 0,1mJ 0,0mJ 0,0A 2,5A 5,0A 7,5A 10,0A 0 50 100 150 200 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=50, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=6A, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE *) Eon include losses due to diode recovery 0 K /W 0.2 0 .1 0 K /W 0 .0 2 -1 0 D = 0 .5 E, SWITCHING ENERGY LOSSES 0,2mJ Ets* 0 .0 5 R,(K/W) 0.705 0.561 0.583 R1 Eon* 0,1mJ Eoff , (s) 0.0341 3.74E-3 3.25E-4 R2 0 K /W -2 0.01 sing le p u lse 0 K /W 1 s -3 C 1 = 1 / R 1 C 2 = 2 /R 2 0,0mJ 0C 50C 100C 150C 1 0 s 1 0 0 s 1m s 10 m s 1 00 m s 1s TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=6A, RG=50, Dynamic test circuit in Figure E) tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 8 Rev. 2.3 Oct.07 SKB06N60HS VGE, GATE-EMITTER VOLTAGE 15V Ciss 120V 10V 480V c, CAPACITANCE 100pF 5V Coss Crss 0V 0nC 10nC 20nC 30nC 40nC 10pF 0V 10V 20V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=6 A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT 10V 11V 12V 13V 14V tSC, SHORT CIRCUIT WITHSTAND TIME 70A 60A 50A 40A 30A 20A 10A 0A 15s 10s 5s 0s 10V 12V 14V 16V 18V VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C) VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C) Power Semiconductors 9 Rev. 2.3 Oct.07 SKB06N60HS 300ns Qrr, REVERSE RECOVERY CHARGE IF=12A 0,50C trr, REVERSE RECOVERY TIME 200ns IF=12A IF=6A IF=6A 100ns IF=3A 0,25C IF=3A 0ns 200A/s 400A/s 600A/s 800A/s 0,00C 200A/s 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E) -400A/s 10,0A dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 800A/s Irr, REVERSE RECOVERY CURRENT -300A/s IF=3A 7,5A IF=12A IF=6A -200A/s 5,0A -100A/s 2,5A 200A/s 400A/s 600A/s -0A/s 200A/s 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E) Power Semiconductors 10 Rev. 2.3 Oct.07 SKB06N60HS TJ=-55C 25C 10A 150C 2,0V VF, FORWARD VOLTAGE IF, FORWARD CURRENT 8A 1,8V IF12A 6A 1,6V IF=6A 4A 1,4V 2A 1,2V IF=3A 0A 0,0V 0,5V 1,0V 1,5V -50C 0C 50C 100C 150C VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage TJ, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 0 K/W 0.2 0.1 0.05 0.02 0 K/W 0.01 single pulse -1 0 R,(K/W) 0.523 0.550 0.835 1.592 R1 , (s) 7.25*10-2 6.44*10-3 7.13*10-4 7.16*10-5 R2 C 1= 1/R 1 C 2 = 2 /R 2 0 K/W 1s -2 tP, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D=tP/T) 10s 100s 1ms 10ms 100ms 1s Power Semiconductors 11 Rev. 2.3 Oct.07 SKB06N60HS PG-TO-263-3-2 Power Semiconductors 12 Rev. 2.3 Oct.07 SKB06N60HS i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR Ir r m QF dir r /dt 90% Ir r m Figure C. Definition of diodes switching characteristics 1 Tj (t) p(t) r1 r2 2 n rn r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L =60nH an d Stray capacity C =40pF. Published by Power Semiconductors 13 Rev. 2.3 Oct.07 SKB06N60HS Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 11/6/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 Rev. 2.3 Oct.07 |
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